GaN microdisk light emitting diodes

Abstract

Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current-voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed. © 2000 American Institute of Physics.