Flux pinning in YBa2Cu3O7-δ thin film samples linked to stacking fault density

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Abstract

In this paper, we report a strong correlation between the stacking fault (SF) density and the critical current density of Y Ba2 Cu3 O7-δ (YBCO) thin films in applied field (Jc in-field). We found that the Jc in-field (Hc) increases as a clear linear dependence of the density of SF identified in the as-grown samples deposited on both SrTi O3 (STO) and LaAl O3 substrates. Detailed microstructural studies including cross-section transmission electron microscopy (TEM) and high resolution TEM were conducted for all the films deposited on STO substrates. This work suggests that the YBCO SF density plays an important role in the YBCO in-field transport performance. © 2008 American Institute of Physics.

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Wang, J., Kwon, J. H., Yoon, J., Wang, H., Haugan, T. J., Baca, F. J., … Barnes, P. N. (2008). Flux pinning in YBa2Cu3O7-δ thin film samples linked to stacking fault density. Applied Physics Letters, 92(8). https://doi.org/10.1063/1.2888749

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