Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory

Abstract

Akey challenge in resistive switching memory is to reduce the switching parameter fluctuation, which always affects the stability and reliability of an RS device. Numerous methods have been carried out for improving the fluctuation of the switching parameter. However, because the physical nature of the switching parameter fluctuation is, to date, not well understood, a universal identification of the switching parameter fluctuation still has not be achieved. Based on the activation energy of carrier transport from the first-principles calculations, we present a physical model. This proposed model is considering the macroscopic fluctuating I-Vcurve and material microstructure to analyze the characteristics of carrier transport and the origin of switching parameter fluctuations. The proposed model may specially identify the defect energy level and quantify the distribution of the switching parameter. The model provides possible clues for improving the uniformity of the switching parameter as well.