High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition

Abstract

A method of alternative co-doping in metal organic chemical deposition was used to realize high hole carrier concentrations of about 6 10 18/cm3 in AlxGa1-xN (x 0.4) and 2 1019/cm3 for GaN at room temperature. This technique opens up a new avenue for fabricating electronic p-channel devices, such as p-channel high electron mobility transistor, and vertical current flow type devices, such as deep ultra violet light emitting diodes. © 2011 American Institute of Physics.