High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings

Abstract

The fabrication and operating characteristics of lateral grating distributed feedback InP-based quantum cascade lasers emitting at λ∼10 μm are reported. High performance, room temperature single mode lasers, utilizing double-sided lateral gratings, are achieved in InP-based material grown by metal organic phase epitaxy. These deeply etched gratings are made possible by the development of a high aspect ratio, multistage, inductively coupled plasma etch process. A threshold current density of ∼5.5 kA cm2 is measured at room temperature and side mode suppression ratio >20 dB with a tuning coefficient of -0.067 cm-1 K-1 is observed over a temperature range of 190-330 K. © 2006 American Institute of Physics.