Formation of ultra narrow lamellar structures in POSS-containing triblock terpolymers

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Abstract

An ultra narrow line structure was prepared in the lamellar morphology of polyhedral oligomeric silsesquioxane (POSS)-containing triblock terpolymer in the bulk via the self-assembly. The triblock terpolymers, which comprised polystyrene, POSS-containing poly(methacrylate) (PMAPOSS) and poly(methyl methacrylate), were synthesized by anionic polymerization. The self-assembled structures were studied by using a transmission electron microscopy (TEM) and a small-angle X-ray scattering (SAXS). It was found that a narrow PMAPOSS domain was layered in triple-domain lamellar, which caused by the effect of strongly segregation with the middle PMAPOSS block. The total d-spacing was 32 nm, and the smallest width of PMAPOSS domain layer was ca. 4 nm. © 2013SPST.

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Goseki, R., Ishizone, T., Hirao, A., & Hayakawa, T. (2013). Formation of ultra narrow lamellar structures in POSS-containing triblock terpolymers. Journal of Photopolymer Science and Technology, 26(1), 39–44. https://doi.org/10.2494/photopolymer.26.39

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