Study of the distribution of temperature profiles in nonstoichiometric SiOx films at laser annealing

Abstract

The distribution of temperature profiles in nonstoichiometric SiOx films at the single pulse laser annealing has been studied theoretically. Temperature distributions on the surface of the SiOx films at irradiation by a laser beam with various intensities have been calculated. Temperature distributions on various depths of the SiOx films at irradiation by a laser beam with an intensity of 52 M{cyrillic}W/cm2 have been found. During the laser pulse of 10 ns with an intensity of 52 MW/cm2, the temperature up to 1800 K can be reached on the specimen surface. © O.O. GAVRYLYUK, O.YU. SEMCHUK, O.V. STEBLOVA, A.A. EVTUKH, L.L. FEDORENKO, 2014.