Abstract
CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons are localized only at temperatures below 100 K. In contrast, real quantum dot formation occurs using migration enhanced epitaxy for overgrowth of CdSe by ZnSe.
Cite
CITATION STYLE
Passow, T., Leonardi, K., Heinke, H., Hommel, D., Seufert, J., Bacher, G., & Forchel, A. (2002). Influence of capping conditions on CdSe/ZnSe quantum dot formation. In Physica Status Solidi (B) Basic Research (Vol. 229, pp. 497–501). https://doi.org/10.1002/1521-3951(200201)229:1<497::AID-PSSB497>3.0.CO;2-T
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
