Circuit design with Independent Double Gate Transistors

Abstract

Circuits with transistors using independently controlled gates have been proposed to reduce the number of transistors and to increase the logic density per area. This paper introduces a novel Vertical Slit Field Effect Transistor with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits. A new adder circuit is proposed, where the power could be reduced by one fifth and the area by on third compared to a tied gate configuration.