Journal Article

Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

Advanced Electronic Materials (2015) 1(11)
DOI: 10.1002/aelm.201500130
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Wu, X., Mei, S., Bosman, M., Raghavan, N., Zhang, X., Cha, D., … Pey, K. L. (2015). Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices. Advanced Electronic Materials, 1(11). https://doi.org/10.1002/aelm.201500130

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