In this research, temperature dependences of the thermal conductivity of reaction-bonded SiC - B4C composite materials at the temperature range of 293 - 1400 K were investigated. The effect of B4C concentration on thermal conductivity is shown. The thermal conductivity of SiC - B4C materials were compared with the thermal conductivity of materials based on silicon carbide and boron carbide obtained by different methods.
CITATION STYLE
Perevislov, S. N., Motaylo, E. S., Novoselov, E. S., & Nesmelov, D. D. (2020). Thermal conductivity of SiC-B4C materials obtained by reaction-sintering method. In IOP Conference Series: Materials Science and Engineering (Vol. 848). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/848/1/012066
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