We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of an atomically thin Au layer on the Bu-L followed by annealing at 850 °C in an argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterization and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate-tunable ambipolar transport across the Dirac point, but we find no observable enhancement of spin-orbit effects in the graphene layer, despite its proximity to the intercalated Au layer.
CITATION STYLE
Kim, K. H., He, H., Struzzi, C., Zakharov, A., Giusca, C. E., Tzalenchuk, A., … Lara-Avila, S. (2020). Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation. Physical Review B, 102(16). https://doi.org/10.1103/PhysRevB.102.165403
Mendeley helps you to discover research relevant for your work.