Pressure-induced photoconductivity enhancement and positive-negative switch in bulk silicon

Abstract

Silicon is a long-standing photosensitive material because of its unique photoelectronic properties and mature manufacturing technology. However, silicon photodetectors are generally limited by weak photoresponse in the near-infrared region. In this work, pressure is used as an effective means of tuning the photoresponse of silicon, specifically in the near-infrared region. Silicon has two different types of photoresponse under pressure. In the pressure range from 1 atm to 10 GPa, huge pressure-enhanced photocurrent is observed under illumination by a xenon lamp and near-infrared light (1064 nm). At 10 GPa, the photocurrent density (Jph), responsivity (R), and external quantum efficiency are increased 40-fold from those at 1.2 GPa. Interestingly, above 10 GPa, a unique pressure-induced positive-negative photoresponse switch is found along with the phase transformation from the semiconductive phase (Si I) to the metallic phase (β-tin). Further experiments show that the photothermal effect is the main factor for negative photoresponse. All these pressure-induced properties give silicon more possibilities in the further design of visible and infrared photodetectors.