Strong Faraday rotation in Ce and Bi comodified epitaxial iron garnet films: Valence control through strain engineering

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Abstract

The correlation between lattice-misfit strain and the valence change of cerium was investigated in cerium and bismuth comodified iron garnet epitaxial films. We demonstrated that the transition of the valence state from Ce 4 to Ce3 is triggered by reducing the compressive lattice-misfit strain and that the increase in concentration of Ce3 induces a red-shift of the optical bandgap as well as an enhancement of the Faraday rotation. An extraordinary Faraday rotation of 0.91 deg/m at 1.55 m was achieved in these films by maximizing the concentration of Ce3 through strain engineering. © 2011 American Institute of Physics.

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Hwang, J. Y., Morandotti, R., & Pignolet, A. (2011). Strong Faraday rotation in Ce and Bi comodified epitaxial iron garnet films: Valence control through strain engineering. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3621838

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