Capacitance-voltage characteristics of thin-film transistors fabricated with solution-processed semiconducting carbon nanotube networks

Abstract

We report the capacitance-voltage (C-V) measurements on thin-film transistors (TFTs) using solution-processed semiconducting carbon nanotube networks with different densities and channel lengths. From the measured C-V characteristics, gate capacitance and field-effect mobility (up to ~50 cm 2 V −1 s −1) of the TFTs were evaluated with better precision compared with the results obtained from calculated gate capacitance. The C-V characteristics measured under different frequencies further enabled the extraction and analysis of the interface trap density at the nanotube-dielectric layer interface, which was found to increase significantly as the network density increases. The results presented here indicate that C-V measurement is a powerful tool to assess the electrical performance and to investigate the carrier transport mechanism of TFTs based on carbon nanotubes.