Abstract
The temperature dependence of the optical constants for amorphous silicon (a-Si) is studied for two different sample thicknesses at two infrared wavelengths. It is observed that the extinction coefficient of a-Si can increase significantly with temperature in the strong absorption regime. In addition, using the Mott-Davis formula, results are obtained for the variation of the optical gap energy for a-Si with temperature, with similar feature observed for both amorphous and crystal silicon.
Cite
CITATION STYLE
Do, N., Klees, L., Leung, P. T., Tong, F., Leung, W. P., & Tam, A. C. (1992). Temperature dependence of optical constants for amorphous silicon. Applied Physics Letters, 60(18), 2186–2188. https://doi.org/10.1063/1.107074
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