Temperature-dependent current-voltage characteristics of β -Ga2O3 trench Schottky barrier diodes

Abstract

Temperature-dependent behavior of regular and trench Ni/β-Ga2O3 (001) Schottky barrier diodes (SBDs) was studied. Current-Voltage (I-V) characteristics, ideality factor, and barrier height of trench SBDs were compared with those of regular SBDs at temperatures ranging from 100 K to 650 K. The trench SBDs showed a superior performance to regular SBDs. At elevated temperatures (as high as 650 K), the trench SBDs maintained a high ON/OFF current ratio (105), which is four orders of magnitude higher than that in the regular diodes. The current-voltage characteristics of the trench SBDs were recovered when the sample was cooled to room temperature after high temperature measurements, whereas the I-V characteristics of the regular SBDs were degraded. The breakdown voltage (BV) was also measured on as-fabricated devices and after high temperature ramp up to 650 K. We observed a reduction in maximum achieved BV from 1084 V to 742 V on the trench SBDs and from 662 V to 488 V on regular SBDs, respectively, after temperature-dependent measurements.