Abstract
A new dislocation etchant for is reported which consists of in the volume ratio of 1:3. This etchant produces distinct etch pits with three‐fold symmetry on the (111)P surface and pyramidal pits elongated along one of the <110> directions on the (001) surface.Comparisons with Huber etchant on the (001) orientation and modified RRE etchant on the (111) orientation are made.
Cite
CITATION STYLE
APA
Chu, S. N. G., Jodlauk, C. M., & Ballman, A. A. (1982). New Dislocation Etchant for InP. Journal of The Electrochemical Society, 129(2), 352–354. https://doi.org/10.1149/1.2123835
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