Mg doping for p-type AlInN lattice-matched to GaN

Abstract

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N A - N D is 5 × 10 18 cm -3 at a Mg concentration [Mg] of ∼2 × 10 19 cm -3. Mg acceptors are partly compensated and one of the compensating defects is related to the occurrence of surface pits. At [Mg] < 2 × 10 19 cm -3, the pit density is independent of [Mg] and N A - N D increases together with increasing [Mg]. At [Mg] > 2 × 10 19 cm -3, as [Mg] increases, the pit density increases and the N A - N D decreases. By decreasing the pit density, a higher N A - N D value is obtained and light-emitting diodes with p-type AlInN layer show improved emission intensity. © 2012 American Institute of Physics.