Co-sensitized TiO2 photoelectrodes by multiple semiconductors (Pbs/Pb0.05Cd0.95S/Cds)to enhance the performance of a solar cell

Abstract

The effect of PbS/Pb0.05Cd0.95S/CdS co-sensitization on the quantum dot-sensitized solar cell performance have been investigated. In this research, a TiO2 nanoparticles was prepared by a sol gel method and immobilized to the FTO (fluorine tin oxide) substrate by dip coating technique. The formation of PbS, Pb0.05Cd0.95S, and CdS quantum dots (QDs) sensitized TiO2 photoelectrode was carried out by successive ionic layer adsorption and reaction (SILAR) method. The as-prepared materials were characterized by scanning electron microscopy, energy dispersive spectroscopy, X-ray diraction, and X-ray photoelectron spectroscopy. Our photoelectro chemical evaluation indicated that the photocurrent of PbS/Pb0.05Cd0.95S/CdS multiple semiconductor (0.363 mA/cm2) is higher than the CdSsingle sensitizer (0.190 mA/cm2), resulting an increase in a photocurrent of 91%. Under 3.5 mW/cm2 illumination, we found that this photoelectrodes have an optimum short-circuit photocurrent density (Isc) of 0.429 mA/cm2 and energy conversion eciency of 1.42%, which is 160% higher than that of a CdS single sensitizer (0.54%). The excellent photoelectro chemical properties of our photoanode, suggest that the TiO2 lms co-sensitized by PbS/Pb0.05Cd0.95S/CdS quantum dots have potential application in a solar cells.