Electroless deposition, post annealing and characterization of nickel films on silicon

Abstract

Electroless deposition of nickel (EN) films on n-type silicon has been investigated under different process conditions. The interface between the film and substrate has been characterized for electrical properties by probing the contact resistances. X-ray diffraction and atomic force microscopy have been performed to obtain information about the structural and morphological details of the films. As a comparative study, nickel films have also been sputter deposited on silicon substrates. An as-deposited electroless film is observed to form non-ohmic contact while in a sputtered film prepared without the application of substrate heating, the formation of metal-insulating- semiconductor type junction is seen. © Indian Academy of Sciences.