Journal ArticleOPEN ACCESS

On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs

  • Ortiz-Conde A
  • Garc´ıa Sanchez F
  • Liou J
Journal of Telecommunications and Information Technology (2000) (3-4) 43-58
DOI: 10.26636/jtit.2000.3-4.28
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Abstract

The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation

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APA

Ortiz-Conde, A., Garc´ıa Sanchez, F. J., & Liou, J. J. (2000). On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs. Journal of Telecommunications and Information Technology, (3–4), 43–58. https://doi.org/10.26636/jtit.2000.3-4.28

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