Abstract
The photoluminescence (PL) and scintillation properties of (C6H5C2H4NH3)2Pb1−xCuxBr4 (x = 0.05, 0.1, 0.25, and 0.5) single crystals prepared by the poor-solvent diffusion method were evaluated. In the PL profiles, free- and bound-exciton luminescence peaks at 410 and 440 nm were observed, respectively. The PL quantum yields (QYs) of the x = 0.05, 0.1, 0.25, and 0.5 samples were 20.0, 19.3, 18.4, and 16.7% with 2% errors, respectively. In the scintillation profiles, a bound-exciton luminescence peak was observed at 440 nm. Under γ-ray exposure with 137Cs, a photoabsorption peak was observed in all the samples, and the scintillation light yields of the x = 0.05, 0.1, 0.25, and 0.5 samples were estimated to be ~12000, ~11000, ~10000, and ~9700 ph/MeV with 10% errors, respectively.
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Onoda, D., Akatsuka, M., Kawano, N., Kato, T., Nakauchi, D., Kawaguchi, N., & Yanagida, T. (2022). Effect of Cu Doping on Photoluminescence and Scintillation Properties of (C6H5C2H4NH3)2PbBr4. Sensors and Materials, 34(2), 585–593. https://doi.org/10.18494/SAM3679
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