InGaAs-capped InAs-GaAs quantum-dot infrared photodetectors operating in the long-wavelength infrared range

Abstract

A ten-period InAs-GaAs quantum-dot infrared photodetector (QDIP) with 8-nm Ino.15Ga0.85As capping layer grown after quantum-dot (QD) deposition is investigated. With reduced InAs QD coverage down to 2.0 mono-layers, responses at 10.4 and 8.4 m are observed for the device under positive and negative biases, respectively. The phenomenon is attributed to the large Stark effect resulted from the asymmetric band diagrams of the device under different voltage polarities. The demonstration of long-wavelength infrared detections with the simple structures of the InGaAs-capped QDIP is advantageous for the development of multicolor QDIP focal-plane arrays. © 2009 IEEE.