Abstract
Key issues of epitaxial growth of III-nitrides on mismatched substrates are analysed. Thick AlN "templates" grown at extremely high temperatures and transition layers allow to reduce the dislocation density down to the order of 108 cm-2.
Cite
CITATION STYLE
APA
Alexeev, A. N., Chaly, V. P., Krasovitsky, D. M., Mamaev, V. V., Petrov, S. I., Sidorov, V. G., & Arcebashev, N. S. (2016). Technology development for GaN based power microwave DHFET. In Journal of Physics: Conference Series (Vol. 690). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/690/1/012042
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free