Energy Efficient Bandgap Reference Generator for RFID Transponder EEPROM in 130 nm CMOS Process

Abstract

Reducing power dissipation of any circuit can make that circuit more energy-efficient and at the same time promise stability. Recent researchers mainly focus on controlling and monitoring low power designs for different low power applications, wireless systems such as radio frequency identification (RFID) transponder. Therefore, generating an internal reference voltage (VR) for the power management unit is the key challenges for researchers to design such applications. Bandgap reference (BGR) is an essential module that assures temperature and independent VR supply in analog circuits. In this research, an improved BGR is designed with the self-startup circuit, bandgap core and an operational amplifier (OP-AMP) to generate a stable VR. A low-power BGR is simulated using Silterra 130 nm CMOS technology. The designed BGR generates a VR of 1.1 V and consumes only 1.4 μA power form 1.2 V power supply voltage. Moreover, it has a temperature coefficient of 41.6 ppm/℃.