Fabrication of phosphorus doped polysilicon thin-film strain gauges using a 50 microns silicon substrate thickness

Abstract

Strain gauges fabrication using phosphorus doped polysilicon thin-film resistors was performed. Strain gauges transducers were designed to measure the strain in load cells, using a Wheatstone bridge circuit configuration. The strain and sensitivity measurements results for load cells application are described. A linear response and excellent repeatability were obtained.