Analysis of plasma oscillations in high-electron mobility transistorlike structures: Distributed circuit approach

Abstract

We develop simple distributed circuit model of the high-electron mobility transistor (HEMT)-like structure for the analysis of the effects associated with plasma oscillations excited in its two-dimensional electron gas (2DEG) channel. Circuit components of the model are related to physical and geometrical parameters of the structure. Developed model accounts for dependence of resistance and inductance of 2DEG channel gated region on gate voltage. Such an approach facilitates and improves understanding of HEMT-like structures' behavior in the regime of excitation of plasma oscillation and is applicable for their performance evaluation and optimization as well. © 2007 American Institute of Physics.