Fabrication of v-groove gratings in InP by inductively coupled plasma etching with SiCl4/Ar

Abstract

Inductively coupled plasma (ICP) etching of v-grooves in InP is demonstrated. We use SiCl4/Ar at a temperature of 25 °C and a broadband photoresist mask. Optimized v-groove etch parameters are discussed, in addition to the effect of various etch parameters on the etch rate and profile. This process utilizes a small amount of mask erosion, and careful control of the chemical and bombardment enhanced etch processes to give a self-limiting v-groove etch profile, which is insensitive to crystallographic directions of the InP.