Fabrication of high TCR TaAl-N thin film by reactive sputtering method

Abstract

The electric characteristics of TaAl-N thin film were investigated. The resistivity of the TaAl-N thin films, having been prepared by DC reactive sputtering of Ta and Al (8:2 area ratio) target in a gas mixture of argon and nitrogen, showed pressure-ratio dependence of nitrogen (PN2/P total). The condition of high PN2/Ptotal was effective for fabricating the films, having a high TCR (the temperature coefficient of the resistivity). As a result, in the condition of P N2/Ptotal= 75%, the TCR values were ( - )35000 ppm/°C (at 100°C) and (-)25000ppm/°C (at 200°C, resistivity).