A 90-GHz double-drift IMPATT diode made with Si MBE

Abstract

For the first time silicon double-drift IMPATT structures have been grown completely by Si molecular-beam epitaxy. The n-type layers are grown at 750°C on low-resistivity n+-type substrates fo lowed by p-type layers at 650°C. The highly doped p+-layers are grown by solid-phase epitaxy in the MBE system. Device design is made for CW operation in W-band. The material is investigated by inspection of beveled samples, defect etching, TEM, SIMS, and spreading resistance measurements. Double-drift flat-profile diodes are housed and mounted employing a technological procedure approved for single-drift diodes. For initial device characterization, dc measurements are performed. Information about doping profile, series, and thermal resistances is obtained. Preliminary RF measurements delivered a maximum output power of 600 mW at 94 GHz with 6.7-percent efficiency from an unoptimized structure. Copyright © 1987 by The Institute of Electrical and Electronics Engineers, Inc.