Properties of highly (100) oriented Pb (Mg1/3,Nb 2/3)O3-PbTiO3 films on LaNiO3 bottom electrodes

Abstract

The 70%Pb (Mg13, Nb23) O3 -30%PbTi O3 (PMNT) films have been fabricated on LaNi O3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for the growth of PMNT films, which depresses the formation of pyrochlore phase and induces the high (100) preferred orientation of perovskite PMNT films. Compared with the PMNT films grown on platinum bottom electrode, the ferroelectric properties of PMNT films grown on LNO are enhanced. The frequency dependence of complex permittivity from PMNT films on LNO is the conjunct result of polarization relaxation and movement of oxygen vacancy, which can be fitted by the function containing Debye and universal dielectric response models, respectively. © 2007 American Institute of Physics.