Conference Proceedings

DEVICE DESIGN CONSIDERATIONS OF A NOVEL HIGH VOLTAGE AMORPHOUS SILICON THIN FILM TRANSISTOR.

Technical Digest - International Electron Devices Meeting (1987) 440-443
DOI: 10.1109/iedm.1987.191453
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Abstract

The performance of a high-voltage thin-film transistor has been characterized in terms of its geometry and operating conditions. Excellent performance, suitable for large-area electronic application, is achieved for optimized designs. An analytical model is found to fit the performance well.

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Martin, R. A., Yap, P. K., Hack, M., & Tuan, H. (1987). DEVICE DESIGN CONSIDERATIONS OF A NOVEL HIGH VOLTAGE AMORPHOUS SILICON THIN FILM TRANSISTOR. In Technical Digest - International Electron Devices Meeting (pp. 440–443). IEEE. https://doi.org/10.1109/iedm.1987.191453

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