Electroluminescence of Cr3+ and pseudo-Stark effect in β-Ga2O3 Schottky barrier diodes

Abstract

Bright, red electroluminescence is generated in reverse biased Schottky barrier diodes (SBDs) based on β-Ga2O3 single crystals codoped with chromium and silicon. It is due to intracenter transitions of octahedrally coordinated Cr3+ ions excited by electron impact in the depletion layer of the diodes. The electroluminescence spectrum around 700 nm in wavelength is nearly identical to the spectrum of the well-known photoluminescence of Cr3+ in β-Ga2O3, which is featured by the two lines R1 and R2. In contrast to the photoluminescence, however, in the electroluminescence, each of the R1 and R2 lines is additionally split by 1.5-3 meV. Since the R1/R2 lines correspond to transitions from two Kramers-degenerate states (split 2E excited state) to the ground state 4A2, this splitting cannot be ascribed to the normal Stark effect in the strong electric field of the Schottky barrier diode's depletion layer. Instead, we explain the splitting by the pseudo-Stark effect that occurs because the Cr3+ ions replace Ga3+ at two kinds of energetically equivalent octahedral sites that differ crystallographically by an inversion at the Cr ion. Superposition of the dominating R1 doublet radiation would result in a tunable beat frequency of about 0.4-0.7 THz and might be utilized for a terahertz light source. Moreover, the electroluminescence of chromium is representative of the ability to excite the luminescent states of other transition metals. Hence, high temperature light-emitting SBDs in different colors are a potential application for β-Ga2O3