4H-SiC Auger recombination coefficient under the high injection condition

Abstract

The on-resistance of bipolar devices depends on the carrier lifetime, which is determined by Shockley-Read-Hall, surface, radiation, and Auger recombination processes. Values for the Auger recombination coefficient have been previously reported, but the values were constant in each report. However, the Auger recombination coefficient should depend on the concentration of excited carriers and the presence of traps. In this study, we observed excited carrier recombination in 4H-SiC under the high injection condition using time-resolved free carrier absorption measurements. Consequently, we discovered that the Auger recombination coefficient is dependent on the excited carrier concentration and that the traps have negligible effects on the coefficient.