Large-scale synthesis of Tellurium nanostructures via galvanic displacement of metals

Abstract

Tellurium (Te) is an attractive semiconductor material for a wide range of applications in various functional devices including, radiation dosimeters, optical storage materials, thermoelectric or piezoelectric generators. In this work, large scale synthesis of tellurium (Te) nanostructures have been successfully carried out in different concentrations of aqueous solutions containing TeO2 and NaOH, by galvanic displacements of Zn and Al which served as the sacrificial materials. Galvanic displacement process is cost-effective and it requires no template or surfactant for the synthesis of nanostructures. By varying the concentrations of TeO2 and NaOH, etching temperatures and etching times, Te nanostructures of various forms of nanostructures were successfully obtained, ranging from one-dimensional needles and rod-like structures to more complex hierarchical structures. Microscopy examinations on the nanostructures obtained have shown that both the diameters and lengths of the Te nanostructures increased with increasing etching temperature and etching time.