Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching

Abstract

A sneak path current—a current passing through a neighboring memory cell—is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types of selector device concepts, the diffusive selector has garnered considerable attention because of its excellent performance. This selector features volatile threshold switching (TS) using the dynamics of active metals such as Ag or Cu, which act as an electrode or dopant in the solid electrolyte. In this study, a diffusive selector based on Ag-doped HfOx is fabricated using a co-sputtering system. As the Ag concentration in the HfOx layer varies, different electrical properties and thereby TS characteristics are observed. The necessity of the electroforming (EF) process for the TS characteristic is determined by the proper Ag concentration in the HfOx layer. This difference in the EF process can significantly affect the parameters of the TS characteristics. Therefore, an optimized doping condition is required for a diffusive selector to attain excellent selector device behavior and avoid an EF process that can eventually degrade device performance.