Chemically doped graphene based ternary field effect transistors

Abstract

Chemically doped graphene was used to fabricate a ternary graphene field effect transistor. A graphene p-n junction was formed by polymer doping, which was sustained after dielectric passivation and thermal annealing processes used to stabilize the interface. Multiple peaks in the I-V curve which are the evidence of two different doping states in a channel could be achieved and modulated by varying the polymer concentration and the ratio of the doped portion in the channel.