Study of spatial distributions of F, H and CF2 radicals in DF CCP discharge in Ar/CF4 and Ar/CHF3 mixtures

Abstract

The comparative research of production and loss of atoms (F, H) and radicals (CF2), important for plasma processing, is carried out in DF CCP plasma in Ar/CF4 and Ar/CHF3 mixtures modeling two etching plasmas (fluorine-rich) and (fluorine-poor) respectively. Electron density, electron temperature and ion energy spectra are measured for single and dual frequency discharge modes. Spatial profiles of radical and atom densities are measured in both mixtures by using spatially resolved actinometry and UV absorption techniques. The opportunity for plasma-surface interaction control using spatial radical and atom density distributions is shown. The influence of high and low frequency powers on balance between surface and volume processes is discussed. © 2010 IOP Publishing Ltd.