Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

Abstract

InAsSb ternary alloy is considered to be an alternative to HgCdTe (MCT) in mid-wavelength infrared spectral region. The high operation temperature conditions are successfully reached with AIII BV bariodes, where InAsSb/AlAsSb system is playing dominant role. Since there is no depletion region in the active layer, the generation-recombination and trap-assisted tunneling mechanisms are suppressed leading to lower dark currents in comparison with standard photodiodes. As a consequence, the bariodes operate at a higher temperature than standard photodiodes which could be used in wide range of system applications, especially where the size, weight, and power consumption are crucial. The paper presents detailed analysis of the bariode's performance (such as dark and photocurrent, differential resistance area product, and detectivity) versus applied voltage, operating temperatures and structural parameters. The optimal working conditions are calculated. The theoretical predictions of bariode's performance are compared with experimental data published in the literature. Finally, the nBn InAsSb/AlAsSb performance is compared to the MCT "Rule 07". © 2013 The Author(s).