Structural, Morphological and Optical properties of n-type Porous Silicon-effect of Etching Current Density

Abstract

Porous silicon layers have been prepared from n-type silicon wafers of (111) orientation. XRD, AFM, reflectivity and PL have been used to characterize the structural, morphological, and optical properties of porous silicon. The influence of varying etching current density in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching current density and attain maximum for 56 mA/cm2 and then decreases. The PL spectrum peak shifts had been slight towards the higher energy side, which supports the quantum confinement effect in porous silicon. The reflectivity shows that the porous silicon surface lower reflectance which is due to the very thin layer of porous silicon and changed refractive index profile at the interface of the bulk silicon and porous silicon material.