A-Si thin film as a photo-receptor for electrophotography

Abstract

Charging with corona and its photo-discharging characteristics were investigated for a photo-receptor of a-Si thin film prepared by glow discharge of SiH4. A thin layer of P-doped Si (n-type) provided between the metal electrode (Ni/Cr) and a-Si ("intrinsic") was adequate to give a sufficient charge-retentivity (td ∼ 30 sec) for negative corona. Excellent photosensitivity (4 erg/cm2 for half decay) and wide spectral sensitivity (< 750 nm) were attained. © 1980.