Abstract
Impurity phases in commercial hot‐pressed Si3N4 were investigated using transmission electron microscopy. In addition to the dominant, β‐Si3N4 phase, small amounts of Si2N2O, SiC, and WC were found. Significantly, a continuous grain‐boundary phase was observed in the ∼ 25 high‐angle boundaries examined. This film is ∼ 10 Å thick between, β‐Si3N4 grains and ∼ 30 Å thick between Si2N2O and β‐Si3N4 grains. Copyright © 1978, Wiley Blackwell. All rights reserved
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CITATION STYLE
APA
LOU, L. K. V., MITCHELL, T. E., & HEUER, A. H. (1978). Impurity Phases in Hot‐Pressed Si3N4. Journal of the American Ceramic Society, 61(9–10), 392–396. https://doi.org/10.1111/j.1151-2916.1978.tb09344.x
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