High Performance Phototransistor Based on 0D-CsPbBr3/2D-MoS2 Heterostructure with Gate Tunable Photo-Response

Abstract

Monolayer MoS2 has been widely researched in high performance phototransistors for its high carrier mobility and strong photoelectric conversion ability. However, some defects in MoS2, such as vacancies or impurities, provide more possibilities for carrier recombination; thus, restricting the formation of photocurrents and resulting in decreased responsiveness. Herein, all-inorganic CsPbBr3 perovskite quantum dots (QDs) with high photoelectric conversion efficiency and light absorption coefficients are introduced to enhance the responsivity of a 2D MoS2 phototransistor. The CsPbBr3/MoS2 heterostructure has a type II energy band, and it has a high responsivity of ~1790 A/W and enhanced detectivity of ~2.4 × 1011 Jones. Additionally, the heterostructure CsPbBr3/MoS2 enables the synergistic effect mechanism of photoconduction and photogating effects with the gate tunable photo-response, which could also contribute to an improved performance of the MoS2 phototransistor. This work provides new strategies for performance phototransistors and is expected to play an important role in many fields, such as optical communication, environmental monitoring and biomedical imaging, and promote the development and application of related technologies.