Flash memory built-in self-diagnosis with test mode control

6Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

The objective of this paper is to present a cost-effective fault diagnosis methodology for flash memory. Flash memory is enjoying a rapid market growth. The research for flash memory testing is mainly to reduce the test cost and improve the production yield. In this paper, we propose a fault diagnosis flow for flash memory. We also propose a flexible built-in self-diagnosis (BISD) design with enhanced test mode control, which reduces the test time and diagnostic data shift-out cycles by using parallel programming and erasure and employing a parallel shift-out mechanism. The area overhead of our BISD circuit is only about 0.5% for a 256Mb commodity flash memory chip. Experimental results from industrial chips show that the proposed diagnosis methodology has high accuracy in distinguishing the fault type. © 2005 IEEE.

Cite

CITATION STYLE

APA

Yeh, J. C., Lai, Y. T., Shih, Y. Y., Wu, C. W., Ho, C. H., & Lin, Y. T. (2005). Flash memory built-in self-diagnosis with test mode control. In Proceedings of the IEEE VLSI Test Symposium (pp. 15–20). https://doi.org/10.1109/VTS.2005.45

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free