Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction

Abstract

Microarea strain distribution in real ridge waveguide laser diodes composed of InGaN/AlGaN/GaN lattice-mismatched heterostructure have been studied by high-resolution microbeam X-ray diffraction using highly collimated sub-mm beam. By the microarea mapping of X-ray diffraction, we confirmed the distribution change of lattice strain around ridge stripe region due to the change of biaxial tensile strain of p-type AlGaN layer. We found that the strain distribution in the ridge waveguide laser diode is not uniform around the ridge stripe region. Microarea mapping of X-ray rocking curves using asymmetric (10-14) reflection. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.