Single-electron transistor made by au nanoparticles and nanogap electrodes

Abstract

A combination of bottom-up processes with top-down processes is one of the candidates to fabricate nanodevices with precise structures in a subnanometer scale. Single-electron transistors (SETs) have been studied extensively, because SETs can be nanodevices with low power consumption and high charge sensitivity. For the practical application of SETs, fabrication techniques for a precise structure, high process yield, and high stability need to be developed. Here, we demonstrate ideal Coulomb diamonds in Au nanoparticles (NPs) SETs. Gap separation of nanogap electrodes was controlled by the electroless Au plating method. Size controlled Au NPs are chemisorbed between the nanogap electrodes as Coulomb islands.