Organic field-effect transistors with high-κ HfO2/ resin double gate insulator

Abstract

High-κ insulator with a higher driving capability is promising for an organic field-effect transistor (OFET). First, insulating material of solution-processed TiO2 was tested for pentacene-based organic transistor. Second, HfO2, which is commonly used for Si FET, was also selected and the organic transistor with stacked HfO2/ organic resin was fabricated. Field-effect mobility of 0.32 cm2/Vs was obtained for the top-contact type OFET with stacked HfO2-based insulator. ©2008CPST.