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InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy

IOP Conference Series: Materials Science and Engineering (2019) 475(1)
DOI: 10.1088/1757-899X/475/1/012022
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Abstract

Pre-epitaxial (001)InP substrate cleaning, growth of In0.52Al0.48As/In0.53Ga0.47As heterostructures lattice-matched to InP substrate by molecular beam epitaxy technique and manufacturing processes of microwave photodiodes with Schottky barrier are developed in this work.

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APA

Dmitriev, D. V., Valisheva, N. A., Gilinsky, A. M., Chistokhin, I. B., Toropov, A. I., & Zhuravlev, K. S. (2019). InAlAs/InGaAs/InP heterostructures for microwave photodiodes grown by molecular beam epitaxy. In IOP Conference Series: Materials Science and Engineering (Vol. 475). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/475/1/012022

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