N-type self-assembled monolayer field-effect transistors and complementary inverters

Abstract

This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10-3 cm2 V-1 s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Highly reproducible n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative are reported. Electron mobilities of 1.5 × 10-3 cm2 V-1s-1 and on/off current ratios up to 105 are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.